Mechanism of CVD of boron by hydrogen reduction of BCl3 in a dual impinging-jet reactor
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics,Industrial and Manufacturing Engineering,General Chemical Engineering,General Chemistry
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Computational investigation on adsorption characteristics of aromatic amine for SiHCl 3 -BCl 3 system;Molecular Physics;2024-04-27
2. A density functional theory study on adsorption of SiHCl3-BCl3 by model molecules of g-C3N4;Materials Today Communications;2024-03
3. Boron Impurity Deposition on a Si(100) Surface in a SiHCl3-BCl3-H2 System for Electronic-Grade Polysilicon Production;Minerals;2022-05-21
4. Gas‐phase kinetic of boron carbide chemical vapor deposition using BCl 3 +CH 4 +H 2 mixture;Journal of the American Ceramic Society;2022-02-18
5. Equilibrium Chemistry in $${\text {BCl}}_3$$ BCl 3 – $${\text {H}}_2$$ H 2 –Ar Plasma;Plasma Chemistry and Plasma Processing;2019-04-10
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