Characterization of negative tone photoresist mr-EBL 6000.5 for i-line stepper and electron beam lithography for the Intra-Level Mix & Match Approach

Author:

Schermer S.,Helke C.,Reinhardt M.,Hartmann S.,Tank F.,Wecker J.,Heldt G.,Voigt A.,Reuter D.

Funder

Sächsische Aufbaubank

Publisher

Elsevier BV

Reference12 articles.

1. MEMS for photonic integrated circuits;Errando-Herranz;IEEE J. Sel. Top. Quantum Electron.,2019

2. Electron beam lithography in nanoscale fabrication: recent development;Tseng;IEEE Trans. Electron. Packag. Manuf.,2003

3. Lithographic performance of resist ma-N 1402 in an e-beam/i-line stepper intra-level mix and match approach;Canpolat-Schmidt,2022

4. Intra-level mix and match lithography with electron beam lithography and i-line stepper combined with resolution enhancement for structures below the CD-limit;Helke;Micro Nano Eng.,2023

5. Development of an e-beam/i-line stepper intra-level mix and match approach with the photoresist mr-EBL 6000.5 for PIC related structures such as waveguides, ring resonators and coupling structures;Reinhardt,2023

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