Fabrication and characterization of field-effect transistors based on MoS2 nanotubes prepared in anodic aluminum oxide templates-Reference-Cited by-同舟云学术

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Fabrication and characterization of field-effect transistors based on MoS2 nanotubes prepared in anodic aluminum oxide templates

Published:2023-06 Issue: Volume:19 Page:100200
ISSN:2590-0072
Container-title:Micro and Nano Engineering
language:en
Short-container-title:Micro and Nano Engineering

Author:

Shiraiwa Naoya,Murata Kyosuke,Nakazawa Takuto,Fukawa Akihiro,Takase Koichi,Ito Takeshi,Shingubara Shoso,Shimizu Tomohiro

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Single-Layer MoS 2 Electronics;Lembke,2015

2. Integrated circuits and logic operations based on single-layer MoS 2;Radisavljevic;ACS Nano,2011

3. Nanostructured MoS2-based advanced biosensors: a review;Barua;ACS Appl. Nano Mater.,2018

4. Detailed photocurrent spectroscopy of the semiconducting group VI transition metal dichalcogenides;Kam;J. Phys. Chem.,1982

5. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010

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