The role of the MOS structure in integrated sensors-Reference-Cited by-同舟云学术

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The role of the MOS structure in integrated sensors

Published:1983-01 Issue: Volume:4 Page:507-526
ISSN:0250-6874
Container-title:Sensors and Actuators
language:en
Short-container-title:Sensors and Actuators

Author:

Senturia Stephen D.

Publisher

Elsevier BV

Subject

General Engineering

Reference48 articles.

1. Three-dimensional representation of input and output transducers;Middelhoek;Sensors and Actuators,198182

2. Development of an ion-sensitive solid-state device for neurophysiological measurements;Bergveld;IEEE Trans. Biomedical Eng.,1970

3. Gate-controlled diodes for ionic concentration measurement;Wen;IEEE Trans. Electron Devices,1979

4. Hydrogen-sensitive MOS field-effect transistor;Lundström;Applied Phys. Letters,1975

5. The charge-flow transistor: a new MOS device;Senturia;Applied Phys. Letters,1977

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1. Oxide Ultrathin Films in Sensor Applications;Oxide Ultrathin Films;2012-01-10

2. Dielectric Spectroscopy in Analysis of Polymers;Encyclopedia of Analytical Chemistry;2000-10-30

3. pH Measurement;The Measurement, Instrumentation and Sensors Handbook on CD-ROM;1999-02-26

4. Fabry–Perot cavity chemical sensors by silicon micromachining techniques;Applied Physics Letters;1999-01-18

5. Surface Micromachining and Electrical Characterization of Polysilicon Microcantilevers;Microelectronics Education;1998

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