Silicon optical sensors fabricated through masked ion implantation-Reference-Cited by-同舟云学术

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Silicon optical sensors fabricated through masked ion implantation

Published:1985-07 Issue:3 Volume:7 Page:177-187
ISSN:0250-6874
Container-title:Sensors and Actuators
language:en
Short-container-title:Sensors and Actuators

Author:

Silard Andrei P.

Publisher

Elsevier BV

Subject

General Engineering

Reference13 articles.

1. Highly-sensitive, fast turning-on light-activated thyristor structures,;Silard,1982

2. Recent advances in silicon solar cells for space use;Rittner,1976

3. Free carrier absorption in silicon;Schroder;IEEE Trans. Electron Devices ED-25,1978

4. A study of the factors which control the efficiency of ion-implanted silicon solar cells;Douglas;IEEE Trans. Electron Devices, ED-27,1980

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Developmental experiments on large‐area silicon solar cells;Journal of Applied Physics;1989-05

2. Bifacial, large-area silicon sensors for radiative energy signals;Sensors and Actuators;1988-11

3. Design/technological experiments on low cost, BSF-type, bifacial solar cells fabricated on large-area silicon wafers;Solar Energy Materials;1988-02

4. Analysis of electric field distributions in ultra-shallow silicon junctions under thermodynamic equilibrium conditions;International Journal of Electronics;1987-10

5. Electro-optical performance of large-area silicon sensors for radiative energy signals;Sensors and Actuators;1987-07

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