A new angular-position detector utilizing the lateral photoeffect in Si-Reference-Cited by-同舟云学术

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A new angular-position detector utilizing the lateral photoeffect in Si

Published:1985-07 Issue:3 Volume:7 Page:153-166
ISSN:0250-6874
Container-title:Sensors and Actuators
language:en
Short-container-title:Sensors and Actuators

Author:

Xing Y.Z.,Boeder C.P.W.

Publisher

Elsevier BV

Subject

General Engineering

Reference12 articles.

1. A new semiconductor photocell using lateral photoeffect;Wallmark;Proc. IEEE,1959

2. Photoeffects in nonuniformly irradiated pn junctions;Lucovsky;J. Appl. Phys.,1969

3. An analysis of the radiation tracking transducer;Allen;IEEE Trans. Electron Devices,1961

4. Photocells exhibiting the longitudinal photoeffect;Buzanova;Radio Eng. Electron Phys.,1965

5. Lateral photodetector operating in the fully reverse-biased mode;Connors;IEEE Trans. Electron Devices,1971

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An integrated position sensor using JFETs as a buffer for PSD output signal;Sensors and Actuators A: Physical;1990-06

2. The linearity and sensitivity of lateral effect position sensitive devices-an improved geometry;IEEE Transactions on Electron Devices;1989-11

3. A bubble-level tilt sensor with a large measurement range;Sensors and Actuators;1989-05

4. SUBSTRATE AND DEFECT INFLUENCES ON THE POSITION-RESPONSE LINEARITY OF POSITION-SENSITIVE DETECTORS;Le Journal de Physique Colloques;1988-09

5. Introduction to Input Devices;Input Devices;1988

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