The impact of MOSFET-based sensors-Reference-Cited by-同舟云学术

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The impact of MOSFET-based sensors

Published:1985-10 Issue:2 Volume:8 Page:109-127
ISSN:0250-6874
Container-title:Sensors and Actuators
language:en
Short-container-title:Sensors and Actuators

Author:

Bergveld P.

Publisher

Elsevier BV

Subject

General Engineering

Reference23 articles.

1. J. E. Lilienfeld, U.S. Patent 1 745 175 (1930).

2. Modulation of conductance of thin films of semiconductors by surface charges;Shockley;Phys. Rev.,1948

3. Design theory of a surface field-effect transistor;Ihantola;Solid-State Electron/,1964

4. Characteristics of the Indium-doped infrared sensing MOSFET;Forbes;IEEE Trans. Electron Devices,1976

5. Hydrogen-sensitive MOS field effect transistor;Lundström;Appl. Phys. Lett.,1975

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