MOS halltrons: A new relation for their use as sensors
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference7 articles.
1. Integrated semiconductor magnetic field sensors;Baltes;Proc. IEEE,1986
2. Magnetic field sensors using the magnetoresistive effect;Dibbern;Sensors and Actuators,1986
3. Magneto-electrical properties of silicon MOST structures;Kassabov;Solid State Electron.,1971
4. The properties of gate controlled diffused microresistors;Kassabov;Electron Technol.,1975
5. Potential and field distribution in high resistivity microresistors and Halltrons for MOS integrated circuits;Velchev;Solid State Electron.,1977
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Wafer Bonding for Micro-ElectroMechanical Systems (MEMS);Perspectives, Science and Technologies for Novel Silicon on Insulator Devices;2000
2. Microelectronic Halltrons with high resistivity channel as effective semiconductor magnetosensitive structures;Microelectronics Journal;1993-10
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