The decrease in the hall angle and the sensitivity of silicon magnetic sensors at high electric fields-Reference-Cited by-同舟云学术

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The decrease in the hall angle and the sensitivity of silicon magnetic sensors at high electric fields

Published:1989-12 Issue:3 Volume:20 Page:225-232
ISSN:0250-6874
Container-title:Sensors and Actuators
language:en
Short-container-title:Sensors and Actuators

Author:

Munter P.J.A.,Kordic S.

Publisher

Elsevier BV

Subject

General Engineering

Reference18 articles.

1. Integrated silicon magnetic-field sensors;Kordic;Sensors and Actuators,1986

2. Integrated silicon multicollector magnetotransistors;Zieren,1983

3. Silicon magnetic vector sensors for integration;Ishida;Proc. 4th Sensor Symp. Japan,1984

4. Offset reduction and 3-D field sensing with magnetotransitors;Kordic,1987

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compatibility between bipolar readout electronics and microstructures in silicon;Sensors and Actuators A: Physical;1992-03

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