Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration-Reference-Cited by-同舟云学术

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Growth of GaAs from a free surface melt under controlled arsenic pressure in a partially confined configuration

Published:1989-01 Issue: Volume:20 Page:179-183
ISSN:0094-5765
Container-title:Acta Astronautica
language:en
Short-container-title:Acta Astronautica

Author:

Gatos H.C.,Lagowski J.,Wu Y.

Publisher

Elsevier BV

Subject

Aerospace Engineering

Reference10 articles.

1. Crystal Growth and Steady‐State Segregation under Zero Gravity: InSb

2. Crystal Growth and Segregation under Zero Gravity: Ge

3. Materials Processing in the Reduced Gravity Environment of Space;Gatos,1982

4. Defects in Semiconductors,1986

5. Proc. 5th European Symp. on Mat. Sciences under Microgravity;Gatos,1984

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Buoyant convection of low Prandtl number melts in horizontal boat configuration;Acta Astronautica;1993-01

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