Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy-Reference-Cited by-同舟云学术

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Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy

Published:1996-08 Issue:2 Volume:45 Page:130-135
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Andreev V.M.,Kazantsev A.B.,Khvostikov V.P.,Paleeva E.V.,Rumyantsev V.D.,Sorokina S.V.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference8 articles.

1. Investigation of a new LPE method of obtaining AlGaAs heterostructures

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaAsSbN-based p-i-n heterostructures for solar cell applications grown by liquid-phase epitaxy;Journal of Materials Science: Materials in Electronics;2019-12-16

2. Solar cell technology on the base of III–V heterostructures;Journal of Physics: Conference Series;2010-11-01

3. Investigation of melt-grown dilute GaAsN and GaInAsN nanostructures for photovoltaics;Energy Procedia;2010-08

4. Preparation and characterization of multilayer AlGaAs/GaAs structures for photovoltaic application;Journal of Physics: Conference Series;2008-05-01

5. A high-efficiency LPE GaAs solar cell at concentrations ranging from 2000 to 4000 suns;Progress in Photovoltaics: Research and Applications;2003

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