Metal-organic molecular beam epitaxy (MOMBE) and laser-modified MOMBE of III-V semiconductors
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Molecular beam epitaxy with gaseous sources;Tu,1994
2. Surface chemistry of a new III–V MOCVD reactant: PhAsH2 on GaAs(100)
3. Non-hydride group V sources for OMVPE
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