CO2 laser annealing of Al-GaAs structure-Reference-Cited by-同舟云学术

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CO2 laser annealing of Al-GaAs structure

Published:1987-08 Issue:5 Volume:17 Page:499-506
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Chumak V.A.,Bertolotti M.,Ferrari A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference9 articles.

1. Ohmic contacts produced by laser‐annealing Te‐implanted GaAs

2. Ohmic AuGe Contacts on n-GaAs. Produced by Nanosecond Laser Pulse Irradiation

3. Pulsed UV Laser Processed Gold and Aluminum Ohmic Contacts on n+-GaAs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Integral properties of solar active regions;Astronomical & Astrophysical Transactions;2003-06

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