Structure change features in laser irradiated amorphous Ge-Reference-Cited by-同舟云学术

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Structure change features in laser irradiated amorphous Ge

Published:1982-05 Issue:4 Volume:89 Page:199-202
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Vitali G.,Bertolotti M.,Zammit U.,Marinelli M.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference21 articles.

1. Laser and electron beam processing of materials;Gold,1980

2. Proc. Defects and radiation effects semiconductors, Intern. Conf.;Bertolotti,1979

3. Laser and electron beam processing of materials;Foti,1980

4. Proc. Seventh Intern. Conf. on Amorphous and liquid semiconductors;Vitali,1978

5. Polycrystal silicon recovery by means of a shaped laser pulse train

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect migration and temperature gradient effects in low-power laser annealing of α–Ge;Microscopy of Semiconducting Materials, 1983;2020-11-25

2. Laser-Induced Reduction of Carrier Activation Energy in Zn-Implanted GaAs;Japanese Journal of Applied Physics;1994-05-15

3. Ability of reflection high energy electron diffraction (RHEED) to observe structural modifications in ion-implanted and annealed GaAs;Journal of Materials Science;1991-06

4. Low‐power pulsed‐laser annealing of implanted GaAs;Journal of Applied Physics;1991-04

5. Temperature gradients effects in low-power laser annealing of ion implanted?-Ge;Applied Physics A Solids and Surfaces;1984-12

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