Persistent photoconductivity and dangling bonds in amorphous germanium
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference16 articles.
1. Electrical conductivity of Ge films during laser‐induced crystallization
2. Large-Lattice-Relaxation Model for Persistent Photoconductivity in Compound Semiconductors
3. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-dopedAlxGa1−xAs
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Persistent photoconductivity in a-Si:H/a-SiNx:H multilayer films at low temperature;Physica Status Solidi (a);1989-06-16
2. Persistent photoconductivity in hydrogenated amorphous silicon;Solid State Communications;1986-07
3. Laser-enhanced crystallization of Ge and Si;Journal of Crystal Growth;1983-12
4. LASER AND ELECTRON BEAM ENHANCED CRYSTALLIZATION OF Si AND Ge;Le Journal de Physique Colloques;1983-10
5. The Role of Ionized Defects in Ge and Si Crystallization;Cohesive Properties of Semiconductors under Laser Irradiation;1983
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