Author:
Campisano S.U.,Foti G.,Grasso F.,Quattrocchi R.,Rimini E.
Subject
General Physics and Astronomy
Reference5 articles.
1. Temperature-dependence of proton channeling in silicon single crystal
2. Proc. Fifth Yugoslav Symp. and Summer School on the Physics of ionized gases;Foti,1970
3. G. Foti, F. Grasso, R. Quattrocchi and E. Rimini, Temperature and energy dependence of proton dechannelling in silicon, submitted to Phys. Rev.
4. Electronic and nuclear contributions to dechannelling
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