Laser-induced gap creation in highly excited semiconductors in the athermal stage. A quantum-mechanical treatment-Reference-Cited by-同舟云学术

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Laser-induced gap creation in highly excited semiconductors in the athermal stage. A quantum-mechanical treatment

Published:1991-04 Issue:3-4 Volume:154 Page:164-168
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Heiner E.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference25 articles.

1. Resonantsnoe vsaimodeistvie elektromagnitnykh polei s poluprovodnikami;Galitzkii,1986

2. Microscopic theory of the optical band edge nonlinearities,1988

3. Carrier Kinetics in a Semiconductor with Light-Induced Gaps

4. Exciton formation from coherent field renormalized electrons and holes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A dynamic Green's function theory for a highly excited direct gap semiconductor;Physica A: Statistical Mechanics and its Applications;1993-02

2. The method of Green's functions for a time-dependent Hamiltonian in systems far off equilibrium;Physica A: Statistical Mechanics and its Applications;1991-11

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