Influence of penetration depth of light on G-R noise in CdSe photoconductors-Reference-Cited by-同舟云学术

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Influence of penetration depth of light on G-R noise in CdSe photoconductors

Published:1968-12 Issue:6 Volume:28 Page:399-400
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Kruizinga S.,Zijlstra R.J.J.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference4 articles.

1. Fluctuation phenoma in semiconductors;Van der Ziel,1959

2. Fluctuation phenomena in solids;Van Vliet,1965

3. Introduction to solid state physics;Kittel,1961

4. Photoelectronic Properties of CdSe Evaporated Films

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current noise in barrier photoconducting devices. I. Theory;Physical Review B;1994-03-15

2. Photoinduced Space Charge Effects on Current Noise in Photoconducting Insulators;MRS Proceedings;1992

3. Determination of the Energy Gap in Photoconducting Insulators Through Current Noise Measuremen;MRS Proceedings;1989

4. Progress in electrophotography in Western Europe;IEEE Transactions on Electron Devices;1972-04

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