The observed trapping parameters of photoexcited carriers in germanium and silicon
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference8 articles.
1. Cascade Capture of Electrons in Solids
2. Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impurities
3. Photoexcited Electron Capture by Ionized and Neutral Shallow Impurities in Silicon at Liquid-Helium Temperatures
4. Low-Temperature Recombination of Electrons and Donors inn-Type Germanium and Silicon
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theoretical Concepts of Photoexcited Hot Carriers;Physics of Nonlinear Transport in Semiconductors;1980
2. A theory of the transport and recombination properties of photoexcited carriers in germanium and silicon at low temperatures;Journal of Physics C: Solid State Physics;1973-10-30
3. Recombination of Electrons at Ionized Donors in Silicon at Low Temperatures;Physical Review Letters;1973-03-12
4. Thermalization Time of Hot Photoexcited Holes inp-Type Germanium;Physical Review B;1972-07-15
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