Transient development of negative absolute minority electron mobility in a GaAsAlGaAs quantum well-Reference-Cited by-同舟云学术

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Transient development of negative absolute minority electron mobility in a GaAsAlGaAs quantum well

Published:1991-02 Issue:9 Volume:152 Page:498-503
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Hum Chi Tso ,Morgenstern Horing Norman J.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference13 articles.

1. Negative Absolute Mobility of Minority Electrons in GaAs Quantum Wells

2. Electron-hole scattering in GaAs quantum wells

3. R.A. Höpfel, private communication.

4. A theory of the effects of carrier-carrier scattering on mobility in semiconductors

5. Negative minority-electron mobility in a nonequilibrium electron-hole plasma

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Time-resolved imaging by using micro-photoluminescence measurement and sum frequency mixing;Physica E: Low-dimensional Systems and Nanostructures;2002-03

2. Time-resolved visualization of electron flow in semiconductor quantum confined structures using carrier drag effect;SPIE Proceedings;2000-07-14

3. Time-resolved carrier drag effect in quantum wells and wires;Physica E: Low-dimensional Systems and Nanostructures;1998-07

4. Direct Coulomb and phonon-mediated coupling between spatially separated electron gases;Physical Review Letters;1992-04-20

5. Electron–Hole Scattering In Quantum Wells;Hot Carriers in Semiconductor Nanostructures;1992

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