Positron annhilation studies in electron irradiated CdTe and CdTe (In)-Reference-Cited by-同舟云学术

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Positron annhilation studies in electron irradiated CdTe and CdTe (In)

Published:1989-11 Issue:8-9 Volume:141 Page:429-432
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Sen Gupta A.,Moser P.,Pautrat J.L.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference22 articles.

1. Annealing of Electron-Irradiated GaAs

2. 7th Int. Conf. on Physics of semiconductors (Radiation damage in semiconductors);Fan,1964

3. 7th Int. Conf. on Physics of semiconductors (Radiation damage in semiconductors);Mithcell,1964

4. 7th Int. Conf. on Physics of semiconductors (Radiation damage in semiconductors);Cleland,1964

5. Influence of defects and temperature on the annihilation of positrons in neutron-irradiated silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Positron lifetime spectroscopy of defect structures in Cd1–x Zn x Te mixed crystals grown by vertical Bridgman–Stockbarger method;Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials;2021-07-06

2. Positron trapping at native vacancies in CdTe crystals: In doping effect;Materials Science and Engineering: B;1993-01

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