Ge- and Pb- associated hole-traps in ZnTe crystals-Reference-Cited by-同舟云学术

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Ge- and Pb- associated hole-traps in ZnTe crystals

Published:1968-04 Issue:11 Volume:26 Page:541-542
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Iida T.,Watanaba H.

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference6 articles.

1. Annual Meeting of the Physical Society of Japan;Sugibuchi,1967

2. Proc. Int. Conf. II–VI Semiconducting compounds;Aoki,1967

3. gValue ofS-State Ions with(ns)1Configuration

4. Atomic structure calculations;Herman,1963

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1. Photoactive Pb3+host lattice ions in photorefractive Pb5Ge3O11investigated by magnetic resonance techniques;Journal of Physics: Condensed Matter;2001-04-05

2. Photoactive Pb3+ host lattice ions in photorefractive Pb5Ge3O11 characterized by ODMR and EPR.;Advances in Photorefractive Materials, Effects and Devices;1999

3. Fundamental studies of p-type doping of CdTe;Journal of Crystal Growth;1996-04

4. Fundamental studies of p-type doping of CdTe;Selected Topics in Group IV and II–VI Semiconductors;1996

5. Spectroscopy of thens1-Centers in Ionic Crystals;physica status solidi (b);1994-09-01

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