A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference16 articles.
1. Native defects in gallium arsenide
2. Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiatedp-type GaAs
3. Electronic energy levels of defects that anneal in the 280-K stage in irradiatedn-type gallium arsenide
4. Charge state controlled short‐ and long‐range defect motions in GaAs
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1. Boron substitution enhanced activity of BxGa1−xAs/GaAs photocatalyst for water splitting;Applied Catalysis B: Environmental;2022-01
2. Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy;PHYS STATUS SOLIDI B;1999
3. Point defects and their reactions in electron-irradiated GaAs investigated by optical absorption spectroscopy;Physical Review B;1996-09-15
4. Ga-Vacancies and AsGa-Antisites in Electron Irradiated GaAs;Materials Science Forum;1995-11
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