Anisotropic recoilless fraction and temperature dependent quadrupole interaction of substitutional 129I in Si due to Jahn-Teller distortion
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference11 articles.
1. Mössbauer Studies of ImplantedI129Ions in Semiconductors and Alkali Halides
2. On the isomer shifts of129I impurities implanted in semiconductors
3. MÖSSBAUER AND CHANNELING EXPERIMENTS ON [MATH]Si AND [MATH]Si
4. Laser and thermal annealing of Te-implanted silicon
5. Radiation defects in ion-implanted silicon. I. Mössbauer spectroscopy ofSn119defect structures from implantations of radioactive antimony
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1. Persistent photoionisation of the DX-center in Te-implanted GaAs;Hyperfine Interactions;1992-04
2. Anisotropic-Debye-Waller factor of iodine impurities in p-type silicon;Journal of Physics: Condensed Matter;1991-05-20
3. 129I-Mössbauer study of diffusion effects in the superionic conductor Ag3SI;Hyperfine Interactions;1990-07
4. Microscopic Nuclear Probes in Beam–Solid Interactions;Physica Scripta;1989-01-01
5. Characterization of Semiconductors by Mössbauer Spectroscopy;Mössbauer Spectroscopy Applied to Inorganic Chemistry;1989
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