Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions-Reference-Cited by-同舟云学术

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Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Published:2022-03 Issue:3 Volume:25 Page:103872
ISSN:2589-0042
Container-title:iScience
language:en
Short-container-title:iScience

Author:

Yuan Haidong,Su Jie,Zhang Siyu,Di Jiayu,Lin Zhenhua,Zhang Jincheng,Zhang Jie^ORCID,Chang Jingjing^ORCID,Hao Yue

Funder

National Basic Research Program of China

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China National Outstanding Youth Science Fund Project

Higher Education Discipline Innovation Project

National Natural Science Foundation of China

Xidian University

China Postdoctoral Science Foundation

Publisher

Elsevier BV

Subject

Multidisciplinary

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4. Large in-plane and vertical piezoelectricity in janus transition metal dichalchogenides;Dong;ACS Nano,2017

5. Prediction of enhanced catalytic activity for hydrogen evolution reaction in janus transition metal dichalcogenides;Er;Nano Lett.,2018

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