(001)-oriented lead selenide films grown on silicon substrates-Reference-Cited by-同舟云学术

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(001)-oriented lead selenide films grown on silicon substrates

Published:1996-04 Issue:3 Volume:37 Page:379-384
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Tetyorkin V.V.,Sipatov A.Yu.,Sizov F.F.,Fedorenko A.I.,Fedorov A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Infrared image sensors

2. Attainment of high sensitivity at elevated operating temperatures with staring hybrid HgCdTe-on-sapphire focal plane arrays

3. Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2buffer layer

4. Infrared sensor arrays with 3-12 mu m cutoff wavelengths in heteroepitaxial narrow-gap semiconductors on silicon substrates

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1. Engineering PbSnSe Heterostructures for Luminescence Out to 8 µm at Room Temperature;Advanced Optical Materials;2024-09-14

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3. Kinetics of electron beam crystallization of amorphous films of Yb2O2S;Journal of Non-Crystalline Solids;2020-11

4. Structural, optical, transient photoconductivity studies and low temperature thermoelectric power measurements on reactively evaporated lead selenide thin films;Journal of Materials Science: Materials in Electronics;2016-02-10

5. Synthesis of PbSe nanostructures with different size and morphology and their electrochemical properties;Journal of Materials Science: Materials in Electronics;2015-10-12

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