Size and stoichiometric dependence of thermal conductivities of In Ga N: A molecular dynamics study-Reference-Cited by-同舟云学术

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Size and stoichiometric dependence of thermal conductivities of In Ga N: A molecular dynamics study

Published:2022-05 Issue: Volume:207 Page:111321
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Wang Bowen,Yan Xuefei,Yan Hejin,Cai Yongqing

Funder

National Natural Science Foundation of China

National Natural Science Foundation of China-Guangdong Joint Fund

University of Macau

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference48 articles.

1. Optical properties of InGaN thin films in the entire composition range;Kazazis;J. Appl. Phys.,2018

2. The structural properties of InGaN alloys and the interdependence on the thermoelectric behavior;Kucukgok;AIP Adv.,2016

3. Design guidelines of InGaN nanowire arrays for photovoltaic applications;Segmene;Int. J. Nano Dimens.,2021

4. Efficient emission of InGaN-based light-emitting diodes: toward orange and red;Zhang;Photonics Res.,2020

5. Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements;Rashidi;Sci. Rep.,2019

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal transport in disordered wurtzite ScAlN alloys using machine learning interatomic potentials;Materials Today Communications;2024-06

2. Opposite atom dependence of isotope engineering of thermal conductivity in bulk and 2D GaN;Nanotechnology;2023-09-14

3. Strong reduction of thermal conductivity of WSe₂ with introduction of atomic defects;Nanotechnology;2022-04-20

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