First-principles calculations of phosphorus-doped SnO2 transparent conducting oxide: Structural, electronic, and electrical properties-Reference-Cited by-同舟云学术

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First-principles calculations of phosphorus-doped SnO2 transparent conducting oxide: Structural, electronic, and electrical properties

Published:2023-01 Issue: Volume:216 Page:111877
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Mondaca F.,Calderón F.A.,Conejeros S.,Mtz-Enriquez A.I.

Funder

National Meteorological Satellite Center

CONICYT

Agencia Nacional de Investigación y Desarrollo

Fondo Nacional de Desarrollo Científico y Tecnológico

Consejo Nacional de Ciencia y Tecnología

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference50 articles.

1. Transparent conducting oxide films for various applications: a review;Afre;Rev. Adv. Mater. Sci.,2018

2. Transparent conducting oxide semiconductors for transparent electrodes;Minami;Semicond. Sci. Technol.,2005

3. Criteria for choosing transparent conductors;Gordon;MRS Bull.,2000

4. Band gap engineering of SnO2 by epitaxial strain: experimental and theoretical investigations;Zhou;J. Phys. Chem. C.,2014

5. Low-temperature plasma-enhanced atomic layer deposition of tin (IV) oxide from a functionalized alkyl precursor: fabrication and evaluation of SnO2-based thin-film transistor devices;Mai;ACS Appl Mater. Interfaces.,2019

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