Oxygen defect in silicon studied by semi-empirical calculations-Reference-Cited by-同舟云学术

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Oxygen defect in silicon studied by semi-empirical calculations

Published:2008-04 Issue:2 Volume:42 Page:380-384
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Ballo P.,Harmatha L.,Donoval D.

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference18 articles.

1. Density Functional Theory;Dreizler,1990

2. Ab initio pseudopotentials for electronic structure calculations of poly-atomic systems using density-functional theory

3. Nitrogen Vacancies as Major Point Defects in Gallium Nitride

4. Unified Approach for Molecular Dynamics and Density-Functional Theory

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of transparent conductive AZO thin films for solar cells;2008 International Conference on Advanced Semiconductor Devices and Microsystems;2008-10

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