Revealing the deformation mechanisms of 6H-silicon carbide under nano-cutting-Reference-Cited by-同舟云学术

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Revealing the deformation mechanisms of 6H-silicon carbide under nano-cutting

Published:2017-09 Issue: Volume:137 Page:282-288
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Wu Zhonghuai,Liu Weidong,Zhang Liangchi

Funder

Australian Research Council

CSC

TFS of UNSW

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference62 articles.

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2. C. Hall, M. Tricard, H. Murakoshi, Y. Yamamoto, K. Kuriyama, H. Yoko, New mold manufacturing techniques, Optics & Photonics 2005: International Society for Optics and Photonics, 2005, p. 58680V.

3. Silicon carbide high-power devices;Weitzel;IEEE Trans. Electron. Dev.,1996

4. S. Suyama, Y. Itoh, High-strength reaction-sintered silicon carbide for large-scale mirrors-effect of surface oxide layer on bending strength, in: Advances in Science and Technology, vol. 63, Trans Tech Publ, 2011, pp. 374–382.

5. Playing with carbon and silicon at the nanoscale;Mélinon;Nat. Mater.,2007

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