The effects of atomic arrangements on mechanical properties of 2H, 3C, 4H and 6H-SiC-Reference-Cited by-同舟云学术

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The effects of atomic arrangements on mechanical properties of 2H, 3C, 4H and 6H-SiC

Published:2022-02 Issue: Volume:203 Page:111114
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Yang Bo,Deng Qibo,Su Yang,Peng Xianghe,Huang Cheng,Lee Alamusi,Hu Ning

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference39 articles.

1. Temperature-dependent infrared optical properties of 3C-, 4H- and 6H-SiC;Tong;Physica B,2018

2. Phonon thermal transport in 2H, 4H and 6H silicon carbide from first principles;Protik;Mater. Today Phys.,2017

3. Recent progress in synthesis, properties and potential applications of SiC nanomaterials;Wu;Prog. Mater Sci.,2015

4. Bright room temperature single photon source at telecom range in cubic silicon carbide;Wang;Nat. Commun.,2018

5. 4H-silicon-carbide-on-insulator for integrated quantum and nonlinear photonics;Lukin;Nat. Photonics,2020

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1. Novel direct and wide bandgap SiC semiconductors: High-throughput screening and density functional theory;Results in Physics;2024-09

2. Atomic-scale deformation behavior of SiC polytypes using molecular dynamics simulation;Materials Today Communications;2024-09

3. Material Removal Mechanisms of Polycrystalline Silicon Carbide Ceramic Cut by a Diamond Wire Saw;Materials;2024-08-27

4. Revisiting the structures and energies of β-SiC $$\left\langle {001} \right\rangle$$ symmetric tilt grain boundaries;Journal of Materials Research;2024-07-02

5. Machine-Learning-Based Interatomic Potentials for Group IIB to VIA Semiconductors: Toward a Universal Model;Journal of Chemical Theory and Computation;2024-06-20

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