Electric field effect in boron and nitrogen doped graphene bilayers-Reference-Cited by-同舟云学术

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Electric field effect in boron and nitrogen doped graphene bilayers

Published:2018-12 Issue: Volume:155 Page:175-179
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Nemnes G.A.,Mitran T.L.,Manolescu A.,Dragoman Daniela

Funder

Romanian Ministry of Research and Innovation

Romania-JINR cooperation

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference38 articles.

1. The rise of graphene;Geim;Nat. Mater.,2007

2. Growth and properties of few-layer graphene prepared by chemical vapor deposition;Park;Carbon,2010

3. Asymmetry gap in the electronic band structure of bilayer graphene;McCann;Phys. Rev. B,2006

4. Direct observation of a widely tunable bandgap in bilayer graphene;Zhang;Nature,2009

5. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature;Xia;Nano Lett.,2010

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5. Interlayer interaction controlling the properties of AB- and AA-stacked bilayer graphene-like BC14n and si2c14;Surfaces and Interfaces;2020-12

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