Defect energy levels and persistent luminescence in Cu-doped ZnS

Author:

Hoang KhangORCID,Latouche Camille,Jobic Stéphane

Funder

National Science Foundation

NERSC

CCAST

CCIPL

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fabrication of enhanced performance Visible-light photodetector based on Ag/ZnS/p-Si/Ag heterojunction grown by chemical bath deposition;Materials Today Communications;2024-03

2. Luminescence in ZnSe:La and ZnSe:(Cu, La) phosphors;PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON MATHEMATICAL SCIENCES AND TECHNOLOGY 2022 (MATHTECH 2022): Navigating the Everchanging Norm with Mathematics and Technology;2024

3. Comprehensive elucidation of experimental results of polytype ZnS‐10H quantum dots produced in single stride;Materials Today Communications;2023-12

4. The effect of room‐temperature plastic deformation in darkness on the photoluminescence properties of ZnS;Journal of the American Ceramic Society;2023-11-23

5. Temperature-dependent study of the fabricated ZnS/p-Si heterojunction;Physica B: Condensed Matter;2023-05

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