First-principles investigation of structural phase transitions and electronic properties of CuGaSe2 up to 100GPa-Reference-Cited by-同舟云学术

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First-principles investigation of structural phase transitions and electronic properties of CuGaSe2 up to 100GPa

Published:2013-02 Issue: Volume:67 Page:21-26
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Xue Hong-Tao,Tang Fu-Ling,Lu Wen-Jiang,Feng Yu-Dong,Wang Zhi-Min,Wang Yi

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference39 articles.

1. Electronic structure of the ternary chalcopyrite semiconductors CuAlS2, CuGaS2, CuInS2, CuAlSe2, CuGaSe2, and CuInSe2

2. Theory of the band-gap anomaly inABC2chalcopyrite semiconductors

3. Optical functions and electronic structure ofCuInSe2,CuGaSe2,CuInS2,andCuGaS2

4. Ab initiovolume-dependent elastic and lattice dynamical properties of chalcopyriteCuGaSe2

5. One-step electrodeposition of CuGaSe2 thin films

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1. Pressure-Induced Irreversible Metallization Accompanying Phase Transition of Chalcopyrite Cu(In_0.7Ga_0.3)Se₂;Inorganic Chemistry;2024-07-22

2. Exploring structural phase transition, electronic and optical characteristics of optoelectronic phosphides XSiP2 (X = Mg, Cd, and Zn) through First principle computation;Journal of Molecular Modeling;2024-06-10

3. Influence of Pressure on Structural, Electronic, and Mechanical Properties of Tetragonal CuGaSe2;Russian Journal of Physical Chemistry A;2023-05

4. Roles of hydrogen in structural stability and electronic property of bulk hydrogenated amorphous silicon;Computational Materials Science;2023-01

5. Structural and Optical Characteristics of Boron Doped CuGaSe2 Chalcopyrite;Intelligent Computing Techniques for Smart Energy Systems;2022

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