Computational modeling and characterization of X–Bi (X = B, Al, Ga, In) compounds: Prospective optoelectronic materials for infrared/near infra applications-Reference-Cited by-同舟云学术

Computational modeling and characterization of X–Bi (X = B, Al, Ga, In) compounds: Prospective optoelectronic materials for infrared/near infra applications

Published:2016-03 Issue: Volume:114 Page:40-46
ISSN:0927-0256
Container-title:Computational Materials Science
language:en
Short-container-title:Computational Materials Science

Author:

Abdul Rahim Nor Ashwani,Ahmed R.,Ul Haq Bakhtiar,Mohamad Mazmira,Shaari A.,Ali N.,Goumri-Said Souraya

Funder

Ministry of Education (MOE) Malaysia

Universiti Teknologi Malaysia

Publisher

Elsevier BV

Subject

Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science

Reference50 articles.

1. A first principle study of band structure of III-nitride compounds

2. First principles study of structural and electronic properties of different phases of boron nitride

3. Study of wurtzite and zincblende GaN/InN based solar cells alloys: First-principles investigation within the improved modified Becke–Johnson potential

4. Spontaneous polarization and piezoelectric constants of III-V nitrides

5. Comparison for the carrier mobility between the III–V nitrides and AlGaAs/GaAs heterostructure field-effect transistors

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