Charge carrier passivating nitrogen–phosphorus defects in crystalline silicon
Author:
Funder
European Union FP7
Publisher
Elsevier BV
Subject
Computational Mathematics,General Physics and Astronomy,Mechanics of Materials,General Materials Science,General Chemistry,General Computer Science
Reference17 articles.
1. Microscopic structure of the hydrogen-phosphorus complex in crystalline silicon
2. Semiempirical electronic-structure calculations of the hydrogen-phosphorus pair in silicon
3. Theory of hydrogen diffusion and reactions in crystalline silicon
4. Deep-level nitrogen centers in laser-annealed ion-implanted silicon
5. First-principles calculation of the interaction between nitrogen atoms and vacancies in silicon
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1. First-Principles Calculations of Defect Structures in B2 AlCo and GaCo;Journal of Phase Equilibria and Diffusion;2017-03-16
2. Theoretical investigation of defect structure in B2 TrSc (Tr =Cd, Ru) alloys;Modern Physics Letters B;2015-12-30
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