High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films.-Reference-Cited by-同舟云学术

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High-Quality Poly-Si Crystallization Technology Based on Laser-Induced Melting and Resolidification Dynamics of Si Thin Films.

Published:2003 Issue:1 Volume:31 Page:57-62
ISSN:0387-0200
Container-title:The Review of Laser Engineering
language:en
Short-container-title:The Review of Laser Engineering

Author:

HATANO Mutsuko¹,GRIGOROPOULOS Costas P.²

Affiliation:

1. Hitachi, Ltd., Central Research Laboratory

2. Department of Mechanical Engineering, University of California

Publisher

Laser Society of Japan

Link

http://www.jstage.jst.go.jp/article/lsj/31/1/31_1_57/_pdf

Reference13 articles.

1. Controlled Super-Lateral Growth of Si Films for Microstructural Manipulation and Optimization

2. Advanced excimer-laser annealing process for quasi single-crystal silicon thin-film devices

3. Nonlinear optical response of inorganic metal cluster MoCu 3 Se 4 (PPh 3 ) 3 Cl solution

4. Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface flattening of poly-Si thin films by laser annealing and electrical properties of LTPS-TFTs;Laser-based Micro- and Nanoprocessing XIV;2020-01-22

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