Comparative Study of DNTT-Based Low-Voltage BGBC, BGTC, TGBC and TGTC Configurations of OTFTs

Abstract

In this chapter, we present the numerical simulation and performance analysis of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT)-based OTFTs by solving fundamental semiconductor equations using finite element method. This work offers a device simulation-based comparative study of low-voltage dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) based on BGBC, BGTC, TGBC, and TGTC configurations of organic thin film transistors (OTFTs). Technology Computer Aided Design (TCAD) has been performed using ATLAS device simulator from Silvaco Inc. by taking into account the density of defects states (DOS) and field-dependent mobility model. A number of electrical metrics, including mobility, threshold voltage, current on-off ratio, transconductance, and subthreshold slope, have been extracted from experimental data as well as from the data obtained from the TCAD simulation of the device's I-V characteristics. For the bottom gate top contact (BGTC) configuration of DNTT-based OTFT, TCAD simulation results are found to be in good agreement with the experimental results reported by others. Additionally, we have retrieved the device performance parameters by running TCAD simulations for the top gate top contact (TGTC), bottom gate bottom contact (BGBC), and top gate bottom contact (TGBC) configurations of the OTFTs. Electrical performance parameters of all four configurations of the OTFTs have been compared and tabulated.