TCAD Device Modelling and Simulation of Wide Bandgap Power Semiconductors
Author:
Publisher
InTech
Link
http://www.intechopen.com/download/pdf/60792
Reference58 articles.
1. Meneghini M, Meneghesso G, Zanoni E, editors. Power GaN Devices: Materials, applications and reliability. Proquest Ebook Central. Cham: Springer; 2016. [5 January 2018]. https://ebookcentral.proquest.com/lib/coventry/reader.action?docID=4676658&query=
2. Elasser A, Chow TP. Silicon carbide benefits and advantages for power electronics circuits and systems. Proceedings of the IEEE. 2002;90(6):969-986
3. Inoue K et al. Development of gallium nitride high electron mobility transistors for cellular base stations. SEI Technical Review. 2010;71:88-93
4. Lophitis N et al. The destruction mechanism in GCTs. IEEE Transactions on Electron Devices. 2013;60(2):819-826
5. Lophitis N et al. Gate commutated thyristor with voltage independent maximum controllable current. IEEE Electron Device Letters. 2013;34(8):954-956
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Donor–Acceptor Compensation on Transient Performance of Vanadium-Doped SiC Photoconductive Switches Using 532-nm Laser;IEEE Transactions on Electron Devices;2024-07
2. Behavioural SiC IGBT Modelling Using Non-Linear Voltage and Current Dependent Capacitances;2023 IEEE Design Methodologies Conference (DMC);2023-09-24
3. 10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency;Key Engineering Materials;2023-05-25
4. Quasi-Fermi-Based Charge Transport Scheme for Device Simulation in Cryogenic, Wide Bandgap, and High-Voltage Applications;IEEE Transactions on Electron Devices;2023-02
5. Physical simulation and modeling of low ohmic contact resistivity for gallium nitride high electron mobility transistor (GaN HEMT) device;THE 5TH INTERNATIONAL CONFERENCE ON BIOSCIENCE AND BIOTECHNOLOGY;2023
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3