Abstract
In this work, a theory of temperature dependence of electrical resistivity is developed, with a particular emphasis on dilute magnetic semiconductors (DMSs). The approach is based on the equation of motion of the Ruderman-Kittel-Kasuya-Yosida (RKKY) exchange interaction and considers both spin and charge disorder. The formalism is applied to the specific case of Ga1−xMnxAs.Using the RKKY exchange interaction, the relaxation time τand the exchange interaction J are calculated. Then using spin-dependent relaxation time, electrical resistivity of the material is calculated. The electrical resistivity of Mn-doped III—V DMS is decreased with increasing temperature and magnetic impurity concentration.