Characterization and Simulation of p-Type Ion Implantation in MCT
Reference19 articles.
1. Saur W. Long wavelength mercury-cadmium telluride photoconductive infrared detectors. Infrared Physics. 1968;8(3):255-258. DOI: 10.1016/0020-0891(68)90016-X
2. Wollrab R, Bauer A, Bitterlich H, Bruder M, Hanna S, Lutz H, Mahlein K-M, Schallenberg T, Ziegler J. Planar n-on-p HgCdTe FPAs for LWIR and VLWIR applications. Journal of Electronic Materials. 2011;40(8):1618-1623. DOI: 10.1007/s11664-011-1659-0
3. Gravrand O, DE Borniol E, Bisotto S, Mollard L, Destefanis G. From long infrared to very long infrared wavelength focal plane arrays made with HgCdTe n+n−/p ion implantation technology. Journal of Electronic Materials. 2007;36(8):981-987. DOI: 10.1007/s11664-007-0151-3
4. Bubulac LO, Lo DS, Tennant WE, Edwall DD, Chen JC, Ratusnik J, Robinson JC, Bostrup G. p On n ion-implanted junctions in liquid phase epitaxy HgCdTe layers on CdTe substrates. Applied Physics Letters. 1987;50(22):1586-1588. DOI: 10.1063/1.97788
5. Cooper DE, Harrison WA. Possible negative-U properties of the cation vacancy in HgCdTe. Journal of Vacuum Science & Technology A. 1990;8(2):1112-1115. DOI: 10.1116/ 1.576970