Contribution to the Calculation of Physical Properties of BeSe Semiconductor-Reference-Cited by-同舟云学术

Contribution to the Calculation of Physical Properties of BeSe Semiconductor

Published:2022-07-20 Issue: Volume: Page:
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Container-title:Chalcogenides - Preparation and Applications
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Author:

Amine Ghebouli Mohamed,Ghebouli Brahim

Abstract

We expose various physical parameters of binary compound BeSe in the stable zinc blend and NiAs structures using the functional HSE hybrid, GGA-PBE, and LDA. We deduce elastic constants, mechanical parameters, and wave velocities according to different orientations. BeSe semiconductor has Γ-X (2.852 eV) and Γ-K (0.536 eV) bandgap in zinc blend and NiAs structures. Electrons transit from Se-p site to the Be-s state and show covalent bonding. Optical absorption peaks result from electronic transitions under ultraviolet light irradiation.

Publisher

IntechOpen

Link

http://www.intechopen.com/download/pdf/80825

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