Epitaxial Growth of Ge on Si by Magnetron Sputtering
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Publisher
InTech
Link
http://www.intechopen.com/download/pdf/59083
Reference53 articles.
1. Hussain AM et al. Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100) physica status solidi (RRL). Rapid Research Letters. 2013;7(11):966-970
2. Luryi S, Kastalsky A, Bean JC. New infrared detector on a silicon chip. Electron Devices, IEEE Transactions on. 1984;31(9):1135-1139
3. Beeler R et al. Comparative study of InGaAs integration on bulk Ge and virtual Ge/Si substrates for low-cost photovoltaic applications. Solar Energy Materials and Solar Cells. 2010;94(12):2362-2370
4. King RR et al. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells. Applied Physics Letters. 2007;90(18)
5. Guter W et al. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight. Applied Physics Letters. 2009;94(22)
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