Abstract
Sb2Ox nano-film/c-Si composite solar cells were prepared by the spin-coating method. The absorption efficiency, the minority carrier lifetime, and the internal/external quantum efficiency of Sb2Ox/c-Si solar cells had a significant improvement because Sb2Ox nano-film, as a wide band gap (~3.44 eV) semiconductor, had an excellent photoelectrical performance, and could form an effective heterojunction with the silicon substrate. Sb2Ox nano-films deposited on the c-Si wafers reduced the loss of the solar light, absorbed the high-energy photons, accelerated the transmission and separation of the photo-generated carriers, and suppressed the recombination of the minority carriers effectively. Thus the power conversion efficiency was improved from 12.8 to 15.3% in Sb2Ox/c-Si solar cells, which was enhanced by 19.53% compared to the untreated polycrystalline silicon solar cells.