Gallium Arsenide as a Competitor to Silicon for High-speed Amplification and Switching
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Published:1982
Issue:6
Volume:35
Page:749
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ISSN:0004-9506
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Container-title:Australian Journal of Physics
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language:en
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Short-container-title:Aust. J. Phys.
Author:
Ladbrooke PH,Debuf DR,Nanayakkara K,Wilkins DR
Abstract
A review is given of the physical and technological factors which affect the electrical behaviour of field-effect devices for high-speed applications. Ballistic electron transport is shown to lead to an electron transit time under the gate electrode which is shorter in GaAs than in Si field-effect transistors (FETs), providing a possible basis for exploitation of transport effects in high-speed devices. Some electrical characteristics of practical Si and GaAs field-effect structures are presented.
Publisher
CSIRO Publishing
Subject
General Physics and Astronomy