Mobility of Hg+ and Br+ Implanted in Quartz
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Published:1996
Issue:3
Volume:49
Page:705
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ISSN:0004-9506
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Container-title:Australian Journal of Physics
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language:en
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Short-container-title:Aust. J. Phys.
Author:
Wang Ke-Ming,Shi Bo-Rong,Zhai Hong-Ying,Ma Shi-Jie,Liu Xiang-Dong,Liu Ji-Tian,Liu Xi-Ju
Abstract
Both Hg+ and Br+ were implanted in quartz (Si02) 7 years ago. The mobilities of the implanted Hg+ and Br+ at room and higher temperatures are investigated by Rutherford backscattering of 2�1 MeV He2+ ions. The results show that both Hg+ and Br+ are still immobile at room temperature after 7 years. The depth distributions of Hg+ agree well with those calculated by the transport of ions in matter program (TRIM'90). However, for the case of Br+ the mean projected range is shallower than the TRIM'90 prediction with increasing implantation energy. It is found that 300 keV Hg+ and 250 keV Br+ are mobile after 6000°C and 5000°C annealing respectively. Both diffusion and evaporation during annealing are observed.
Publisher
CSIRO Publishing
Subject
General Physics and Astronomy