Transverse Fluctuations and Their Effects on the Stable Functioning of Semiconductor Devices

Abstract

Semiconductor plasma is often found in chaotic unpredictable motion which shows some anomalous behaviors providing multiple challenges to work with the instabilities in a semiconductor device. Experimental studies have shown that these instabilities give rise to fluctuations and azimuthal non-uniformities, which are usually present in the semiconductor. The energy fluctuations have also been observed in some of the cases. In this paper, we have obtained the fluctuations in velocity field by integrating the linearized governing hydrodynamic equations with RungeKutta method of order four (RK4). Then, we have come up with a mathematical formulation, where these fluctuations can be obtained from a KdV family equation with homotopy-assisted symbolic simulation. We have also obtained the relative velocity between the solitary structures for different parameters. Finally, by giving a detailed explanation of the behavior of semiconductor devices, we can study the usefulness of formulating the plasma waves in the various regime, and predict their characteristics theoretically.