Effect of Post-thermal Annealing on the Structural, Morphological, and Optical Properties of RF-sputtered In2S3 Thin Films
Author:
AKÇAY Neslihan1, ERENLER Berkcan2, ÖZEN Yunus2, GREMENOK Valery3, BUSKIS Konstantin Pavlovich3, ÖZÇELİK Süleyman2
Affiliation:
1. BASKENT UNIVERSITY 2. GAZI UNIVERSITY 3. National Academy of Sciences of Belarus
Abstract
Indium sulfide (In2S3) thin films were deposited on soda lime glass (SLG) substrate by radio frequency (RF) magnetron sputtering technique at 150 °C and then thermally annealed under argon (Ar) atmosphere at 350 °C and 450 °C for a period of 30 min. The effect of post-thermal annealing on the structural, morphological, and optical properties of the films were investigated. The formation of the stable tetragonal β-In2S3 was confirmed by X-ray diffraction (XRD) analysis. It was seen that the thermal annealing treatment at 450 °C improved the crystallization of the films. The change in the surface morphology of the films depending on the post-thermal annealing process were determined by atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses. The energy dispersive X-ray spectroscopy (EDX) analysis indicated that the films had slightly sulfur (S) deficit composition and the concentration of S slightly increased with the thermal annealing process. The room temperature (RT) photoluminescence (PL) spectra revealed that the films included sulfur vacancies (VS: donor), indium (In) vacancies (VIn: acceptor), indium interstitial (Ini: donor) and oxygen (O) in vacancy of sulfur (OVs: acceptor) defects with strong and broad emission bands at around 1.70 eV, 2.20 eV, and 2.71 eV.
Publisher
Gazi University Journal of Science
Subject
Multidisciplinary,General Engineering
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