Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation-Reference-Cited by-同舟云学术

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Improvement of the carrier transport property and interfacial behavior in InGaAs quantum well Metal-Oxide-Semiconductor Field-Effect-Transistors with sulfur passivation

Published:2020-07-31 Issue:4 Volume:29 Page:266-269
ISSN:1225-5475
Container-title:JOURNAL OF SENSOR SCIENCE AND TECHNOLOGY
language:en
Short-container-title:KSS

Author:

Kim Jun-Gyu,Kim Dae-Hyun

Funder

Defense Acquisition Program Administration

Ministry of Trade, Industry and Energy

Publisher

The Korean Sensors Society

Reference9 articles.

1. CMOS beyond Si: Nanometer-Scale III-V MOSFETs

2. InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing

3. High Performance Quantum Well InGaAs-On-Si MOSFETs With sub-20 nm Gate Length For RF Applications

4. Sulfur cleaning for (100), (111)A, and (111)B InGaAs surfaces with In content of 0.53 and 0.70 and their Al2O3/InGaAs MOS interface properties

5. Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- $\kappa$ Gate Dielectrics

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