Prospects for Antiferromagnetic Spintronic Devices

Author:

Khalili Amiri Pedram1,Phatak Charudatta23,Finocchio Giovanni4

Affiliation:

1. 1Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois, USA; email: pedram@northwestern.edu

2. 3Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, USA

3. 2Materials Science Division, Argonne National Laboratory, Lemont, Illinois, USA

4. 4Department of Mathematical and Computer Sciences, Physical Sciences, and Earth Sciences, University of Messina, Messina, Italy

Abstract

This article examines recent advances in the field of antiferromagnetic spintronics from the perspective of potential device realization and applications. We discuss advances in the electrical control of antiferromagnetic order by current-induced spin–orbit torques, particularly in antiferromagnetic thin films interfaced with heavy metals. We also review possible scenarios for using voltage-controlled magnetic anisotropy as a more efficient mechanism to control antiferromagnetic order in thin films with perpendicular magnetic anisotropy. Next, we discuss the problem of electrical detection (i.e., readout) of antiferromagnetic order and highlight recent experimental advances in realizing anomalous Hall and tunneling magnetoresistance effects in thin films and tunnel junctions, respectively, which are based on noncollinear antiferromagnets. Understanding the domain structure and dynamics of antiferromagnetic materials is essential for engineering their properties for applications. For this reason, we then provide an overview of imaging techniques as well as micromagnetic simulation approaches for antiferromagnets. Finally, we present a perspective on potential applications of antiferromagnets for magnetic memory devices, terahertz sources, and detectors.

Publisher

Annual Reviews

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